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公司榮譽-蘇州優(yōu)麥德科技有限公司蘇州優(yōu)麥德創(chuàng)辦以來，在江蘇省重大成果轉化項目、蘇州市各級人才項目支持下，經過10年攻關完成了從材料生長設備的自主研發(fā)到GaN單晶襯底?...
Suzhou Nanowin Science and Technology Co., LtdDedicated to third-generation semiconductor core key materials.
Oct 8, 2022 · 2" self-supporting GaN wafers (non-doped) Specifications: GaN-FS-CU-C50 Size:Ф 50.8 ± 1 mm Thickness:350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm
Oct 8, 2022 · Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10Ω*cm. Retail price.
基于氮化鎵單晶的同質外延技術，是未來能源互聯網的核心底層技術。 納維科技.
SEO-Suzhou Nanowin Science and Technology Co., LtdDedicated to third-generation semiconductor core key materials.
基于GaN材料的射頻器件，具有高功率、高效率、耐高溫、抗輻照等優(yōu)勢，是迄今最理想的半導體射頻電子器件。 基于氮化鎵單晶襯底的HEMT器件，為同時實現高頻率、寬頻譜、?...
Oct 8, 2022 · 4" self-supporting GaN wafers (non-doped) Specification: GaN-FS-CU-C100 Size:Ф 100 ± 0.1 mm Thickness:650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm
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